B170/B - B1100/B
Document number: DS30018 Rev. 10 - 2
2 of 4
www.diodes.com
September 2010
? Diodes Incorporated
B170/B - B1100/B
Maximum Ratings
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
B170/B
B180/B
B190/B
B1100/B
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
70
80
90
100
V
RMS Reverse Voltage
VR(RMS)
49
56
63
70
V
Average Rectified Output Current @ TT
= 125
°C
IO
1.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
30
A
Repetitive Peak Reverse Current
IRRM
1.0
A
Thermal Characteristics
Characteristic
Symbol
B170/B
B180/B
B190/B
B1100/B
Unit
Typical Thermal Resistance Junction to Terminal (Note 4)
RθJT
25
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Forward Voltage Drop
VF
-
-
0.79
0.69
V
IF
= 1.0A, T
A
= 25
°C
IF
= 1.0A, T
A
= 100
°C
Leakage Current (Note 5)
IR
-
-
-
-
0.5
5.0
mA
@ Rated VR, TA
= 25
°C
@ Rated VR, TA
= 100
°C
Total Capacitance
CT
-
-
80
pF
VR
= 4V, f = 1MHz
Notes: 4. Valid provided that terminals are kept at ambient temperature.
5. Short duration pulse test used to minimize self-heating effect.
0.01
0.1
1.0
10
0 0.2 0.4 0.6 0.8 1.0
I , INS
T
AN
T
ANE
O
U
S
F
O
R
WA
R
D
C
U
R
R
EN
T
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
Fig. 1 Typical Forward Characteristics
T = 25°CJ
I Pulse Width = 300μsF
10
100
1,000
0.1
1
10
100
C
,
T
O
T
AL
C
A
P
A
C
I
T
AN
C
E (p
F
)
T
V , DC REVERSE VOLTAGE (V)R
Fig. 2 Total Capacitance vs. Reverse Voltage
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